Shenzhen Wudi Microelectronics Co., Ltd

Generally, it is metal - oxide - semiconductor field effect transistor, or metal - insulator - semiconductor. G: gate; S: source; D: drain. The source and drain layers of MOS transistors are interchangeable, and they are both N-type regions formed in p-type backgates. In most cases, the two regions are the same, even if the two ends are switched, the performance of the device will not be affected. Such devices are considered to be symmetric.